d a t a sh eet BAP1321-04 b ook, halfpage m3d088 product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
features high voltage, current controlled rf resistor for rf attenuators and switches low diode capacitance low diode forward resistance very low series inductance for applications up to 3 ghz. applications rf attenuators and switches. description two planar pin diodes in series configuration in a sot23 small smd plastic package. pinning pin description 1 anode 2 cathode 3 common connection k , 4 columns 21 3 top view mam107 21 3 marking code: 6fp. fig.1 simplified outline (sot23) and symbol. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min. max. unit per diode v r continuous reverse voltage - 60 v i f continuous forward current - 100 ma p tot total power dissipation t s 90 c - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 65 +150 c product specification BAP1321-04 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t j = 25 c unless otherwise speci?ed. note 1. guaranteed on aql basis: inspection level s4, aql 1.0. thermal characteristics symbol parameter conditions typ. max. unit per diode v f forward voltage i f = 50 ma 0.95 1.1 v i r reverse leakage current v r =60v - 100 na c d diode capacitance v r = 0; f = 1 mhz 0.42 - pf v r = 1 v; f = 1 mhz 0.375 0.45 pf v r = 20 v; f = 1 mhz 0.275 0.325 pf r d diode forward resistance f = 100 mhz; note 1 i f = 0.5 ma 3.4 5.0 w i f = 1 ma 2.4 3.6 w i f = 10 ma 1.2 1.8 w i f = 100 ma 0.85 1.3 w | s 21 | 2 isolation v r = 0; f = 900 mhz 15.7 - db v r = 0; f = 1800 mhz 10.5 - db v r = 0; f = 2450 mhz 7.9 - db | s 21 | 2 insertion loss i f = 0.5 ma; f = 900 mhz 0.27 - db i f = 0.5 ma; f = 1800 mhz 0.35 - db i f = 0.5 ma; f = 2450 mhz 0.43 - db | s 21 | 2 insertion loss i f = 1 ma; f = 900 mhz 0.21 - db i f = 1 ma; f = 1800 mhz 0.29 - db i f = 1 ma; f = 2450 mhz 0.37 - db | s 21 | 2 insertion loss i f = 10 ma; f = 900 mhz 0.14 - db i f = 10 ma; f = 1800 mhz 0.21 - db i f = 10 ma; f = 2450 mhz 0.29 - db | s 21 | 2 insertion loss i f = 100 ma; f = 900 mhz 0.10 - db i f = 100 ma; f = 1800 mhz 0.18 - db i f = 100 ma; f = 2450 mhz 0.26 - db t l charge carrier life time when switched from i f = 10 ma to i r = 6 ma; r l = 100 w ; measured at i r =3ma 0.5 -m s l s series inductance i f = 100 ma; f = 100 mhz 1.4 - nh symbol parameter value unit r th j-s thermal resistance from junction to soldering point 220 k/w product specification BAP1321-04 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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